Variable Barrier Diode/Sensor

Description:

 

This device is a Schottky-type diode with a continuously variable barrier height (variable over 0.5V) and nominally a three terminal variable barrier diode.  The technology can be either permanently or reversibly switched, with potential application in multiple-state information storage. 

 

It may also be used in the fabrication of standard two terminal diodes.  Here, the technology provides a means of fabricating diodes with precisely controlled effective barrier heights that are tunable over approximately a 0.5V range.

 

U.S. Patent No. 6,455,873

 

Go to the Office of Technology Transfer

Patent Information:
For Information, Contact:
Christine Gramer
Senior Technology Development Associate
University of Oregon
cgramer@uoregon.edu
Inventors:
Mark Lonergan
Keywords:
Chemical
Devices
Materials Science
Nanoscience & Microtechnologies
ONAMI