Synthesis of Solution Precursors From Aluminum and Gallium Bulk Minerals/Materials


The inventors developed novel methods for producing Keggin-like structures containing 13 metal ions ranging from all Gallium to all Aluminum to mixed metals of metal ions including combinations of Gallium, Aluminum, and Indium.  These clusters are preorganized with the desired stoichiometry, which makes them ideal synthetic precursors for thin film production.  They are exceptionally well suited for use in thin film transistors because they are optically clear and have improved electron mobility over existing deposited oxides.  In addition, this novel synthetic method allows for solution processing, rather than vapor deposition, that is facile and non-toxic.

The inventors are interested in finding partners who are interested in integrating this technology into their thin film production.


Patent Information:
For Information, Contact:
Jim Deane
University of Oregon
Darren Johnson
Shannon Boettcher
Brantly Fulton
Milton Jackson
Cory Perkins
Douglas Keszler